IPN95R1K2P7ATMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; SOT-223 PACKAGE; 1200 MOHM; PRICE/PERFORMANCE

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IPN95R1K2P7ATMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; SOT-223 PACKAGE; 1200 MOHM; PRICE/PERFORMANCE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPN95R1K2P7ATMA1

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	478 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	7 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	PG-SOT223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPN95R1 Series

Part	Power Dissipation (Max) [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPN95R1K2P7ATMA1	7 W	20 V	478 pF	-55 °C	150 °C	950 V	N-Channel	PG-SOT223	10 V	3.5 V	Surface Mount	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	1.2 Ohm	6 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 1.50
		10	$ 1.00
		50	$ 0.91
		100	$ 0.69
		200	$ 0.64
Digikey	Cut Tape (CT)	1	$ 1.79
		10	$ 1.14
		100	$ 0.77
		500	$ 0.61
		1000	$ 0.56
	Digi-Reel®	1	$ 1.79
		10	$ 1.14
		100	$ 0.77
		500	$ 0.61
		1000	$ 0.56
	Tape & Reel (TR)	3000	$ 0.49
		6000	$ 0.47

Description

General part information

IPN95R1 Series

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest950 V CoolMOS™ P7technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th)of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.

Documents

Technical documentation and resources