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TNPW201054R9BETF - TNPW 2010 (5025 metric)

TNPW201054R9BETF

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Vishay General Semiconductor - Diodes Division

RES 54.9 OHM 0.1% 2/5W 2010

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TNPW201054R9BETF - TNPW 2010 (5025 metric)

TNPW201054R9BETF

Active
Vishay General Semiconductor - Diodes Division

RES 54.9 OHM 0.1% 2/5W 2010

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationTNPW201054R9BETF
CompositionThin Film
FeaturesMilitary
Height - Seated (Max) [Max] [z]0.03 in
Height - Seated (Max) [Max] [z]0.75 mm
Number of Terminations2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-55 °C
Package / Case2010 (5025 Metric)
Power (Watts)0.4 W
Power (Watts)0.4 W
Resistance54.9 Ohms
Size / Dimension [x]0.197 in
Size / Dimension [x]5 mm
Size / Dimension [y]0.098 in
Size / Dimension [y]2.5 mm
Supplier Device Package2010
Temperature Coefficient25 ppm/°C
Tolerance0.1 %

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

TNPW2010 Series

54.9 Ohms ±0.1% 0.4W, 2/5W Chip Resistor 2010 (5025 Metric) Military Thin Film

Documents

Technical documentation and resources