PMZB390UNEYL

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Nexperia USA Inc.

TRANS MOSFET N-CH 30V 0.9A 3-PIN DFN T/R

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PMZB390UNEYL

Active

Nexperia USA Inc.

TRANS MOSFET N-CH 30V 0.9A 3-PIN DFN T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMZB390UNE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMZB390UNEYL

Current - Continuous Drain (Id) (Ta)	900 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	1.3 nC
Input Capacitance (Ciss) (Max)	41 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	3-XFDFN
Package Name	DFN1006B-3
Power Dissipation (Max)	350 mW, 5.43 W
Rds On (Max)	470 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	950 mV

PMZB390UNE Series

30 V, N-channel Trench MOSFET

Part	Gate Charge (Max)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Package Name	Package / Case	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Vgs(th) (Max)	Vgs (Max)	Power Dissipation (Max)
Nexperia USA Inc. PMZB390UNEYL	1.3 nC	MOSFET (Metal Oxide)	4.5 V	1.5 V	-55 °C	150 °C	470 mOhm	DFN1006B-3	3-XFDFN	41 pF	900 mA	30 V	N-Channel	Surface Mount	950 mV	8 V	5.43 W 350 mW