SUM85N15-19-E3

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Vishay General Semiconductor - Diodes Division

TRANS MOSFET N-CH 150V 85A 3-PIN(2+TAB) D2PAK

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Active

Vishay General Semiconductor - Diodes Division

TRANS MOSFET N-CH 150V 85A 3-PIN(2+TAB) D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SUM85N15-19-E3

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	4750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.75 W, 375 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SUM85N15-19-E3	10 V	150 V	4 V	N-Channel	3.75 W 375 W	MOSFET (Metal Oxide)	20 V	110 nC	85 A	Surface Mount	19 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	4750 pF	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 85A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources