Specification	H5N5016PL-E0-E#T2

Current - Continuous Drain (Id) (Ta)	50 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	130 nC
Input Capacitance (Ciss) (Max)	5300 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-264-3, TO-264AA
Package Name	TO-264
Power Dissipation (Max)	250 W
Rds On (Max)	128 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

H5N5016PL-E0-E Series

Nch Single Power MOSFET 500V 50A128mOhm TO-264A

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Mounting Type	Operating Temperature	Current - Continuous Drain (Id) (Ta)	Technology	Rds On (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Package Name	Vgs(th) (Max)	Package / Case	FET Type
Renesas Electronics Corporation H5N5016PL-E0-E#T2	250 W	10 V	5300 pF	30 V	Through Hole	150 °C	50 A	MOSFET (Metal Oxide)	128 mOhm	130 nC	500 V	TO-264	4 V	TO-264-3 TO-264AA	N-Channel

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