1SS133M R0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 90V 150MA DO34

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Taiwan Semiconductor Corporation

DIODE GEN PURP 90V 150MA DO34

Technical Specifications

Parameters and characteristics for this part

Specification	1SS133M R0G

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	150 mA
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	DO-34, DO-204AG, Axial
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-34
Technology	Standard

Part	Capacitance @ Vr, F	Mounting Type	Current - Average Rectified (Io)	Package / Case	Speed	Speed	Reverse Recovery Time (trr)	Technology	Operating Temperature - Junction [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction
Taiwan Semiconductor Corporation 1SS133M R0G	4 pF	Through Hole	150 mA	Axial DO-204AG DO-34	Any Speed	200 mA	4 ns	Standard	175 °C	DO-34	500 nA
Taiwan Semiconductor Corporation 1SS133M	4 pF	Through Hole	150 mA	Axial DO-204AG DO-34	Any Speed	200 mA	4 ns	Standard		DO-34	500 nA	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 90 V 150mA Through Hole DO-34

Technical documentation and resources