BAT15099RE6327HTSA1
ActiveRF SCHOTTKY DIODE, DUAL PAIR SERIES, 4 V, 110 MA, 410 MV, 0.29 PF, SOT-143
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BAT15099RE6327HTSA1
ActiveRF SCHOTTKY DIODE, DUAL PAIR SERIES, 4 V, 110 MA, 410 MV, 0.29 PF, SOT-143
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Technical Specifications
Parameters and characteristics for this part
| Specification | BAT15099RE6327HTSA1 |
|---|---|
| Capacitance @ Vr, F | 0.5 pF |
| Current - Max [Max] | 110 mA |
| Diode Type | Schottky - Cross Over |
| Operating Temperature | 150 °C |
| Package / Case | TO-253-4, TO-253AA |
| Power Dissipation (Max) [Max] | 100 mW |
| Supplier Device Package | PG-SOT-143-3D |
| Voltage - Peak Reverse (Max) [Max] | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.90 | |
| 10 | $ 0.78 | |||
| 100 | $ 0.54 | |||
| 500 | $ 0.45 | |||
| 1000 | $ 0.38 | |||
| Digi-Reel® | 1 | $ 0.90 | ||
| 10 | $ 0.78 | |||
| 100 | $ 0.54 | |||
| 500 | $ 0.45 | |||
| 1000 | $ 0.38 | |||
| Tape & Reel (TR) | 3000 | $ 0.30 | ||
Description
General part information
BAT15099 Series
This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications which frequencies are as high as 12 GHz.
Documents
Technical documentation and resources