ZVP2120GTA

Active

Diodes Inc

TRANS MOSFET P-CH 200V 0.2A 4-PIN(3+TAB) SOT-223 T/R

Search across all available documentation for this part.

Active

Diodes Inc

TRANS MOSFET P-CH 200V 0.2A 4-PIN(3+TAB) SOT-223 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	ZVP2120GTA

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	25 Ohm
Supplier Device Package	SOT-223-3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.5 V

P-Channel Enhancement Mode Vertical DMOS FET

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Power Dissipation (Max)
Diodes Inc ZVP2120GTA	200 mA	10 V	SOT-223-3	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	200 V	Surface Mount	100 pF	3.5 V	2 W	-55 °C	150 °C	25 Ohm	P-Channel
Diodes Inc ZVP2120A		10 V	TO-92	TO-226-3 TO-92-3	MOSFET (Metal Oxide)	200 V	Through Hole	100 pF	3.5 V		-55 °C	150 °C	25 Ohm	P-Channel	20 V	700 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel Enhancement Mode Vertical DMOS FET

Technical documentation and resources