DMN4010LFG-7

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Diodes Inc

TRANS MOSFET N-CH 40V 11.5A 8-PIN POWERDI EP T/R

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Diodes Inc

TRANS MOSFET N-CH 40V 11.5A 8-PIN POWERDI EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMN4010LFG-7

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1810 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max) [Max]	930 mW
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

N-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max) [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Vgs (Max)
Diodes Inc DMN4010LFG-7	4.5 V 10 V	40 V	Surface Mount	1810 pF	12 mOhm	3 V	8-PowerVDFN	930 mW	N-Channel	11.5 A	-55 °C	150 °C	POWERDI3333-8	MOSFET (Metal Oxide)	20 V

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General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources