BSM180D12P3C007
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 180 A, 1.2 KV, MODULE
BSM180D12P3C007
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 180 A, 1.2 KV, MODULE
Description
General part information
BSM180 Series
BSM180C12P2E202 is a SiC (silicon carbide) power module with low surge and low switching loss, suitable for converter, photovoltaics, wind power generation, heating equipment.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSM180D12P3C007 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Tc) | 180 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) | 900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | Module |
| Package Name | Module |
| Power - Max | 880 W |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) | 5.6 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
About Export Regulations
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Impedance Characteristics of Bypass Capacitor
Notes for Calculating Power Consumption:Static Operation
How to Use LTspice® Models: Tips for Improving Convergence
Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs
How to Create Symbols for PSpice Models
Importance of Probe Calibration When Measuring Power: Deskew
Basics of Thermal Resistance and Heat Dissipation
Calculation of Power Dissipation in Switching Circuit
Taping Information
How to Suppress the Parallel Drive Oscillation in SiC Modules
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Optimized heat sink assembly method for effective heat dissipation
How to Use PSIM Models
Thermal Resistance Measurement Method for SiC MOSFET
Part Explanation
What Is Thermal Design
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Oscillation countermeasures for MOSFETs in parallel
Inner Structure
4 Steps for Successful Thermal Designing of Power Devices
How to Use PLECS Models
Method for Monitoring Switching Waveform
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Measurement Method and Usage of Thermal Resistance RthJC
Compliance of the ELV directive
How to Use LTspice® Models
What is a Thermal Model? (SiC Power Device)
Reliability Test Result
PCB Layout Thermal Design Guide
Application Note for SiC Power Devices and Modules
Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET
Judgment Criteria of Thermal Evaluation
Evaluation Board User's Guide for C-type Full SiC Module (BSMGD3C12D24-EVK001)
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
ESD Data
Precautions for Thermal Resistance of Insulation Sheet
θ<sub>JA</sub> and Ψ<sub>JT</sub>
How to Use Thermal Models
Precautions When Measuring the Rear of the Package with a Thermocouple
Notes for Temperature Measurement Using Thermocouples
How to measure the oscillation occurs between parallel-connected devices
BSM080D12P2C008
