Description
General part information
IPW60R041 Series
600V CoolMOS™ P6 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and suitable for use in PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC silverbox, adapter, LCD & PDP TV, lighting, server, telecom and UPS.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPW60R041P6FKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 77.5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 170 nC |
| Input Capacitance (Ciss) (Max) | 8180 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3 |
| Power Dissipation (Max) | 481 W |
| Rds On (Max) | 41 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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