Specification	IRF7379QTRPBF

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	4.3 A
Current - Continuous Drain (Id) (Typical)	5.8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	25 nC
Input Capacitance (Ciss) (Max)	520 pF
Mounting Type	Surface Mount
Package Length	0.154 in
Package Name	8-SOIC, 8-SO
Package Width	3.9 mm
Power - Max	2.5 VA
Rds On (Max)	45 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

IRF737 Series

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Package Name	Rds On (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power - Max	Technology	Vgs(th) (Max)	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)	Mounting Type	Configuration	Package Length	Package Width	FET Feature
INFINEON IRF7379TR	30 V	520 pF	8-SO 8-SOIC	45 mOhm	25 nC	-55 °C	150 °C	2.5 VA	MOSFET (Metal Oxide)	1 V	4.3 A	5.8 A	Surface Mount	N P-Channel	0.154 in	3.9 mm
INFINEON IRF7379TRPBF	30 V	520 pF	8-SO 8-SOIC	45 mOhm	25 nC	-55 °C	150 °C	2.5 VA	MOSFET (Metal Oxide)	1 V	4.3 A	5.8 A	Surface Mount	N P-Channel	0.154 in	3.9 mm
INFINEON IRF7379	30 V	520 pF	8-SO 8-SOIC	45 mOhm	25 nC	-55 °C	150 °C	2.5 VA	MOSFET (Metal Oxide)	1 V	4.3 A	5.8 A	Surface Mount	N P-Channel	0.154 in	3.9 mm
INFINEON IRF7379PBF	30 V	520 pF	8-SO 8-SOIC	45 mOhm	25 nC	-55 °C	150 °C	2.5 VA	MOSFET (Metal Oxide)	1 V	4.3 A	5.8 A	Surface Mount	N P-Channel	0.154 in	3.9 mm
INFINEON IRF7379QTRPBF	30 V	520 pF	8-SO 8-SOIC	45 mOhm	25 nC			2.5 VA	MOSFET (Metal Oxide)	1 V	4.3 A	5.8 A	Surface Mount	N P-Channel	0.154 in	3.9 mm	Logic Level Gate

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