Specification	IPC60N04S406ATMA1

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	33 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2650 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Name	PG-TDSON-8-23
Power Dissipation (Max)	63 W
Qualification	AEC-Q101
Rds On (Max)	6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IPC60N Series

Part	Qualification	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Rds On (Max)	Vgs(th) (Max)	Grade	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	FET Type	Package Name	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IPC60N04S4L06ATMA1	AEC-Q101	3600 pF	60 A	MOSFET (Metal Oxide)	10 V	4.5 V	16 V	63 W	Surface Mount	5.6 mOhm	2.2 V	Automotive	8-PowerTDFN	-55 °C	175 °C	43 nC	40 V	N-Channel	PG-TDSON-8-23
INFINEON IPC60N04S406ATMA1	AEC-Q101	2650 pF	60 A	MOSFET (Metal Oxide)			20 V	63 W	Surface Mount	6 mOhm	4 V	Automotive	8-PowerTDFN	-55 °C	175 °C	33 nC	40 V	N-Channel	PG-TDSON-8-23	10 V

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