Specification	E3M0120090D

Current - Continuous Drain (Id) (Tc)	23 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	17.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	350 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Power Dissipation (Max)	97 W
Qualification	AEC-Q101
Rds On (Max)	155 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	18 V
Vgs(th) (Max)	3.5 V

E3M0120090 Series

Part	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Rds On (Max)	Package Name	Qualification	Package / Case	FET Type	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max) Positive	Vgs (Max) Negative	Grade	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Leads
Wolfspeed, Inc. E3M0120090D	350 pF	97 W	155 mOhm	TO-247-3	AEC-Q101	TO-247-3	N-Channel	23 A	17.3 nC	900 V	Through Hole	SiCFET (Silicon Carbide)	-55 °C	150 °C	18 V	-8 V	Automotive	3.5 V	15 V
Wolfspeed, Inc. E3M0120090J	414 pF	83 W	155 mOhm	D2PAK TO-263-7	AEC-Q101		N-Channel	22 A	18 nC	900 V	Surface Mount	SiCFET (Silicon Carbide)	-55 °C	150 °C	15 V	-4 V	Automotive	3.5 V	15 V	7 Leads

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