Zenode.ai Logo

Description

General part information

2N3421P-Transistor-PIND Series

This specification covers the performance requirements for NPN, silicon, 2N3418, 2N3419, 2N3420 and 2N3421 transistors for use in medium power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/393 and two levels of product assurance (JANHC and JANKC) for die (element evaluation) are provided, as specified in MIL-PRF-19500/393. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: TO-5 or TO-39, and surface mount version U4 suffix. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/393.

Technical Specifications

Parameters and characteristics for this part

Specification2N3421P
Current - Collector (Ic) (Max)3 A
Current - Collector Cutoff (Max)5 µA
DC Current Gain (hFE) (Min)40
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-5-3 Metal Can, TO-205AA
Package NameTO-5AA
Power - Max1 VA
Transistor TypeNPN
Vce Saturation (Max)500 mV
Voltage - Collector Emitter Breakdown (Max)80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources