IRL40T209ATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 40V 300A 8HSOF

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 40V 300A 8HSOF

Technical Specifications

Parameters and characteristics for this part

Specification	IRL40T209ATMA1

Current - Continuous Drain (Id) @ 25°C	300 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	269 nC
Input Capacitance (Ciss) (Max) @ Vds	16000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs [Max]	0.72 mOhm
Supplier Device Package	PG-HSOF-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
Infineon Technologies IRL40T209ATMA1	300 A	PG-HSOF-8-1	500 W	269 nC	2.4 V	Surface Mount	0.72 mOhm	40 V	20 V	4.5 V 10 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	16000 pF	8-PowerSFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 300A (Tc) 500W (Tc) Surface Mount PG-HSOF-8-1

Technical documentation and resources