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IXFT58N20Q

IXFT58N20Q

Obsolete
LITTELFUSE

DISCMSFT NCH HIPERFET-Q CLASS TO-268AA

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IXFT58N20Q

IXFT58N20Q

Obsolete
LITTELFUSE

DISCMSFT NCH HIPERFET-Q CLASS TO-268AA

Find alt

Description

General part information

IXFT58N20Q Series

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Advantages: Easy assembly High Power density Space savings

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFT58N20Q
Current - Continuous Drain (Id) (Tc)58 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)140 nC
Input Capacitance (Ciss) (Max)3600 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD3PAK (2 Leads + Tab), TO-268-3, TO-268AA
Package NameTO-268AA
Power Dissipation (Max)300 W
Rds On (Max)40 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources