Specification	SQJ860EP-T1_GE3

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	55 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2700 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	48 W
Qualification	AEC-Q101
Rds On (Max)	6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SQJ860 Series

Part	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Power Dissipation (Max)	Package / Case	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Qualification	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Grade	Rds On (Max)	FET Type	Vgs (Max)	Mounting Type
Vishay Dale SQJ860EP-T1_GE3	40 V	55 nC	48 W	PowerPAK® SO-8	MOSFET (Metal Oxide)	-55 °C	175 °C	PowerPAK® SO-8	AEC-Q101	10 V	4.5 V	2.5 V	2700 pF	60 A	Automotive	6 mOhm	N-Channel	20 V	Surface Mount

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