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Description

General part information

MAT02 Series

Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 20mA 500mW Through Hole TO-78-6

Technical Specifications

Parameters and characteristics for this part

SpecificationMAT02BH/883C
Current - Collector (Ic) (Max)20 mA
Current - Collector Cutoff (Max)200 pA
DC Current Gain (hFE) (Min)500
Mounting TypeThrough Hole
NPN Count2
Operating Temperature (Max)125 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-78-6 Metal Can
Package NameTO-78-6
Power - Max0.5 W
Transistor ConfigurationDual
Transistor TypeNPN
Vce Saturation (Max)100 mV
Voltage - Collector Emitter Breakdown (Max)40 V

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