Specification	IPB50N12S3L15ATMA1

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	57 nC, 57 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	4180 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3-2
Power Dissipation (Max)	100 W
Qualification	AEC-Q101
Rds On (Max)	15.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.4 V

IPB50N12 Series

Part	Input Capacitance (Ciss) (Max)	Vgs (Max)	Grade	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Qualification	Rds On (Max)	Technology	Mounting Type	Current - Continuous Drain (Id) (Tc)	Package Name	Gate Charge (Max)	Vgs(th) (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
INFINEON IPB50N12S3L15ATMA1	4180 pF	20 V	Automotive	N-Channel	120 V	100 W	AEC-Q101	15.7 mOhm	MOSFET (Metal Oxide)	Surface Mount	50 A	PG-TO263-3-2	57 nC 57 nC	2.4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 °C	10 V	4.5 V

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