PSMN7R0-100BS,118

Active

Nexperia USA Inc.

N-CHANNEL 100V 6.8 MΩ STANDARD LEVEL MOSFET IN D2PAK.

Find alt

Alpha

PSMN7R0-100BS,118

Active

Nexperia USA Inc.

N-CHANNEL 100V 6.8 MΩ STANDARD LEVEL MOSFET IN D2PAK.

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN7R0-100BS Series

Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN7R0-100BS,118

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	125 nC, 125 nC
Input Capacitance (Ciss) (Max)	6686 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	269 W
Rds On (Max)	6.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

PSMN7R0-100BS Series

N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK.

Part	Input Capacitance (Ciss) (Max)	Technology	Power Dissipation (Max)	FET Type	Package Name	Vgs(th) (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max)
Nexperia USA Inc. PSMN7R0-100BS,118	6686 pF	MOSFET (Metal Oxide)	269 W	N-Channel	D2PAK	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	100 A	-55 °C	175 °C	125 nC 125 nC	Surface Mount	100 V	20 V	6.8 mOhm