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SOT1118

PMDPB30XNAX

Active
Nexperia USA Inc.

20 V, DUAL N-CHANNEL TRENCH MOSFET

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SOT1118

PMDPB30XNAX

Active
Nexperia USA Inc.

20 V, DUAL N-CHANNEL TRENCH MOSFET

Find alt

Description

General part information

PMDPB30XNA Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationPMDPB30XNAX
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Ta)4.5 A
Current - Continuous Drain (Id) (Tc)12 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Max)10 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)619 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-UFDFN Exposed Pad
Package Length2 mm
Package Name6-HUSON
Package Width2 mm
Power - Max (Ta)640 mW
Power - Max (Tc)11 W
QualificationAEC-Q101
Rds On (Max)34 mOhm
TechnologyMOSFET (Metal Oxide)

Pricing

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CAD

3D models and CAD resources for this part