JANTXV2N6306
ActiveMicrochip Technology
POWER BJT TO-3 ROHS COMPLIANT: YES
JANTXV2N6306
ActiveMicrochip Technology
POWER BJT TO-3 ROHS COMPLIANT: YES
Description
General part information
JANTXV2N6306-Transistor Series
This specification covers the performance requirements for NPN silicon, power 2N6306 and 2N6308 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/498.
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV2N6306 |
|---|---|
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Cutoff (Max) | 50 µA |
| DC Current Gain (hFE) (Min) | 15 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-3, TO-204AA |
| Package Name | TO-204AA (TO-3) |
| Power - Max | 125 W |
| Qualification | 498, MIL-PRF-19500 |
| Transistor Type | NPN |
| Vce Saturation (Max) | 5 V |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
Pricing
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CAD
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Documents
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