IRS21091STRPBF

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EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 0.29 A SOURCE AND 0.6 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: ENABLE, PROGRAMMABLE DEADTIME, SHOOT THROUGH PROTECTION, SINGLE INPUT

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IRS21091STRPBF

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INFINEON

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Description Specifications Series Pricing CAD Documents

Description

General part information

IRS21091 Series

600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. For the new version with ourSOI technologywe recommend2ED21091S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Technical Specifications

Parameters and characteristics for this part

Specification	IRS21091STRPBF

Channel Type	Synchronous
Current - Peak Output (Sink)	600 mA
Current - Peak Output (Source)	290 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	35 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.5 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	100 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS21091 Series

Part	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Logic Voltage - VIL	Logic Voltage - VIH	Number of Drivers	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Name	Package Width	Rise Time (Typ)	Fall Time (Typ)	Channel Type	Input Type	Driven Configuration	Current - Peak Output (Sink)	Current - Peak Output (Source)	Gate Channel	Gate Type	Mounting Type	High Side Voltage - Max (Bootstrap)
INFINEON IRS21091SPBF	10 VDC	20 V	0.8 V	2.5 V	2	-40 °C	150 °C	0.154 in	8-SOIC	3.9 mm	100 ns	35 ns	Synchronous	Non-Inverting	Half-Bridge	600 mA	290 mA	N-Channel	IGBT MOSFET N-Channel MOSFET	Surface Mount	600 V
INFINEON IRS21091PBF	10 VDC	20 V	0.8 V	2.5 V	2	-40 °C	150 °C	0.3 in	8-DIP 8-PDIP	7.62 mm	100 ns	35 ns	Synchronous	Non-Inverting	Half-Bridge	600 mA	290 mA	N-Channel	IGBT MOSFET	Through Hole	600 V
INFINEON IRS21091STRPBF	10 VDC	20 V	0.8 V	2.5 V	2	-40 °C	150 °C	0.154 in	8-SOIC	3.9 mm	100 ns	35 ns	Synchronous	Non-Inverting	Half-Bridge	600 mA	290 mA	N-Channel	IGBT MOSFET N-Channel MOSFET	Surface Mount	600 V
INFINEON IRS21091PBF	10 VDC	20 V	0.8 V	2.5 V	2	-40 °C	150 °C	0.3 in	8-DIP 8-PDIP	7.62 mm	100 ns	35 ns	Synchronous	Non-Inverting	Half-Bridge	600 mA	290 mA	N-Channel	IGBT MOSFET N-Channel MOSFET	Through Hole	600 V

Pricing

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