Specification	SI4488DY-T1-GE3

Current - Continuous Drain (Id) (Ta)	3.5 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	36 nC, 36 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.56 W
Rds On (Max)	50 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

SI4488 Series

Part	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Technology	FET Type	Gate Charge (Max)	Package Name	Rds On (Max)	Vgs (Max)	Package Length	Package Width	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SI4488DY-T1-E3	Surface Mount	-55 °C	150 °C	1.56 W	2 V	150 V	MOSFET (Metal Oxide)	N-Channel	36 nC 36 nC	8-SOIC	50 mOhm	20 V	0.154 in	3.9 mm	3.5 A	10 V
Vishay Dale SI4488DY-T1-GE3	Surface Mount	-55 °C	150 °C	1.56 W	2 V	150 V	MOSFET (Metal Oxide)	N-Channel	36 nC 36 nC	8-SOIC	50 mOhm	20 V	0.154 in	3.9 mm	3.5 A	10 V

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