Specification	C3M0025065D

Current - Continuous Drain (Id) (Tc)	97 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	108 nC
Input Capacitance (Ciss) (Max)	2980 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Power Dissipation (Max)	326 W
Rds On (Max)	34 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	19 V
Vgs(th) (Max)	3.6 V

C3M0025065 Series

Part	Technology	Operating Temperature (Max)	Operating Temperature (Min)	Mounting Type	Vgs (Max) Negative	Vgs (Max) Positive	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Package / Case	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	FET Type	Gate Charge (Max)	Rds On (Max)	Package Name	Drive Voltage (Max Rds On, Min Rds On)
Wolfspeed, Inc. C3M0025065K	SiCFET (Silicon Carbide)	175 °C	-40 °C	Through Hole	-8 V	19 V	3.6 V	650 V	97 A	TO-247-4	2980 pF	326 W	N-Channel	112 nC	34 mOhm	TO-247-4L	15 V
Wolfspeed, Inc. C3M0025065D	SiCFET (Silicon Carbide)	175 °C	-40 °C	Through Hole	-8 V	19 V	3.6 V	650 V	97 A	TO-247-3	2980 pF	326 W	N-Channel	108 nC	34 mOhm	TO-247-3	15 V

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