Specification	SSM6K341NU,LF

Current - Continuous Drain (Id) (Ta)	6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	9.3 nC
Input Capacitance (Ciss) (Max)	550 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-WDFN Exposed Pad
Package Length	2 mm
Package Name	6-UDFNB
Package Width	2 mm
Power Dissipation (Max)	2.5 W
Rds On (Max)	36 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SSM6K341NU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, SOT-1220(UDFN6B)

Part	Input Capacitance (Ciss) (Max)	Rds On (Max)	FET Type	Technology	Drain to Source Voltage (Vdss)	Package Name	Package Length	Package Width	Vgs (Max)	Gate Charge (Max)	Package / Case	Mounting Type	Operating Temperature	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Vgs(th) (Max)
Toshiba Semiconductor and Storage SSM6K341NU,LF	550 pF	36 mOhm	N-Channel	MOSFET (Metal Oxide)	60 V	6-UDFNB	2 mm	2 mm	20 V	9.3 nC	6-WDFN Exposed Pad	Surface Mount	150 °C	2.5 W	6 A	4 V	10 V	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources