
PMV230ENEAR
ActiveNexperia USA Inc.
60V, N-CHANNEL TRENCH MOSFET

PMV230ENEAR
ActiveNexperia USA Inc.
60V, N-CHANNEL TRENCH MOSFET
Description
General part information
PMV230ENEA Series
60V, N-channel Trench MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | PMV230ENEAR |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 1.5 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 4.8 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 177 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | TO-236AB |
| Power Dissipation (Max) | 480 mW, 1.45 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 222 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.7 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Power MOSFET frequently asked questions and answers
Using power MOSFETs in parallel
Reflow soldering profile
LFPAK MOSFET thermal design guide - Part 2
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Reel pack for SMD, 7"; Q3/T4 product orientation
Wave soldering profile
RC Thermal Models
Nexperia package poster
LFPAK MOSFET thermal design guide, Chinese version
Questions about package outline drawings
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body