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Description

General part information

PMV230ENEA Series

60V, N-channel Trench MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV230ENEAR
Current - Continuous Drain (Id) (Ta)1.5 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)4.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)177 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameTO-236AB
Power Dissipation (Max)480 mW, 1.45 W
QualificationAEC-Q101
Rds On (Max)222 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.7 V

Pricing

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CAD

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