Specification	IRL530NSTRRPBF

Current - Continuous Drain (Id) (Tc)	17 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	34 nC
Input Capacitance (Ciss) (Max)	800 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	79 W, 3.8 W
Rds On (Max)	100 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

IRL530 Series

Part	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Rds On (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Package Name	Technology	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	FET Type	Mounting Type
INFINEON IRL530NSTRLPBF	4 V	10 V	100 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	17 A	D2PAK	MOSFET (Metal Oxide)	34 nC	800 pF	2 V	3.8 W 79 W	20 V	-55 °C	175 °C	100 V	N-Channel	Surface Mount
INFINEON IRL530NSTRRPBF	4 V	10 V	100 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	17 A	D2PAK	MOSFET (Metal Oxide)	34 nC	800 pF	2 V	3.8 W 79 W	20 V	-55 °C	175 °C	100 V	N-Channel	Surface Mount

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