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TK125V65Z - High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.125 Ω@10V, DFN 8 x 8, DTMOSⅥ

TK31V60W5,LVQ

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.109 Ω@10V, DFN 8 X 8, DTMOSⅣ

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TK125V65Z - High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.125 Ω@10V, DFN 8 x 8, DTMOSⅥ

TK31V60W5,LVQ

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.109 Ω@10V, DFN 8 X 8, DTMOSⅣ

Find alt

Description

General part information

TK31V60W5 Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.109 Ω@10V, DFN 8 x 8, DTMOSⅣ

Technical Specifications

Parameters and characteristics for this part

SpecificationTK31V60W5,LVQ
Current - Continuous Drain (Id) (Ta)30.8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)105 nC
Input Capacitance (Ciss) (Max)3000 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case4-VSFN Exposed Pad
Package Length8 mm
Package Name4-DFN-EP
Package Width8 mm
Power Dissipation (Max)240 W
Rds On (Max)109 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Resonant Circuits and Soft Switching
Selection Guide MOSFETs 2025 Rev1.0
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Avalanche energy calculation
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
TK31V60W5 Data sheet/English
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
MOSFET Secondary Breakdown
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Calculating the Temperature of Discrete Semiconductor Devices
Maximum Ratings: Power MOSFET Application Notes
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
TK31V60W5 Data sheet/Japanese
Electrical Characteristics: Power MOSFET Application Notes
Simplified CFD Model Application Note
Hints and Tips for Thermal Design part3
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
MOSFET SPICE model grade
Structures and Characteristics: Power MOSFET Application Notes
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
RC Snubbers for Step-Down Converters
Motor Control (Vacuum Cleaners)
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
MOSFET Self-Turn-On Phenomenon
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system