D711N60TXPSA1

Obsolete

Infineon Technologies

DIODE GEN PURP 6KV 1070A

Search across all available documentation for this part.

Obsolete

Infineon Technologies

DIODE GEN PURP 6KV 1070A

Technical Specifications

Parameters and characteristics for this part

Specification	D711N60TXPSA1

Current - Average Rectified (Io)	1070 A
Current - Reverse Leakage @ Vr	50 mA
Mounting Type	Clamp On
Operating Temperature - Junction [Max]	160 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	B-PUK, DO-200AB
Speed	Standard Recovery >500ns
Speed	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	6000 V
Voltage - Forward (Vf) (Max) @ If	1.9 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed
Infineon Technologies D711N60TXPSA1	1.9 V	1070 A	50 mA	-40 °C	160 °C	Standard	B-PUK DO-200AB	Clamp On	6000 V	Standard Recovery >500ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 6000 V 1070A Clamp On

Technical documentation and resources