ZXM61P03FTA

Active

Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Search across all available documentation for this part.

Active

Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	ZXM61P03FTA

Current - Continuous Drain (Id) @ 25°C	1.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.8 nC
Input Capacitance (Ciss) (Max) @ Vds	140 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	625 mW
Rds On (Max) @ Id, Vgs	350 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

P-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Supplier Device Package	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)
Diodes Inc ZXM61P03FTC	4.8 nC	20 V	140 pF	P-Channel	350 mOhm	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	SOT-23-3	625 mW	1 V	4.5 V 10 V	-55 °C	150 °C	1.1 A	Surface Mount	30 V
Diodes Inc ZXM61P03FTA	4.8 nC	20 V	140 pF	P-Channel	350 mOhm	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	SOT-23-3	625 mW	1 V	4.5 V 10 V	-55 °C	150 °C	1.1 A	Surface Mount	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources