RBN75H65T1FPQ-A0#CB0

Obsolete

Renesas Electronics Corporation

IGBT 650V 75A TO-247A BUILT-IN FRD

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RBN75H65T1FPQ-A0#CB0

Obsolete

Renesas Electronics Corporation

IGBT 650V 75A TO-247A BUILT-IN FRD

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

RBNxxH65T1 Series Series

The RBN50H65T1FPQ-A0 650V, 50A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.

Technical Specifications

Parameters and characteristics for this part

Specification	RBN75H65T1FPQ-A0#CB0

Current - Collector (Ic) (Max)	150 A
Gate Charge	54 nC
IGBT Type	Trench
Input Type	Standard
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Package Name	TO-247A
Power - Max	312 W
Reverse Recovery Time (trr)	72 ns
Switching Energy (Off)	1 mJ
Switching Energy (On)	1.6 mJ
Td (off) @ 25°C	113 ns
Td (on) @ 25°C	29 ns
Test Condition Current	75 A
Test Condition Resistance	16 Ohm
Test Condition Voltage	400 V
Test Condition Voltage (Secondary)	15 V
Vce(on) (Max)	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

RBNxxH65T1 Series Series

IGBT 650V 50A TO-247A Built-In FRD

Part	Input Type	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Reverse Recovery Time (trr)	Test Condition Current	Test Condition Voltage (Secondary)	Test Condition Resistance	Test Condition Voltage	Mounting Type	Switching Energy (On)	Switching Energy (Off)	Package Name	Vce(on) (Max)	Power - Max	Operating Temperature	Gate Charge	Td (off) @ 25°C	Td (on) @ 25°C	Current - Collector (Ic) (Max)	Package / Case
Renesas Electronics Corporation RBN50H65T1FPQ-A0#CB0	Standard	Trench	650 V	65 ns	50 A	15 V	16 Ohm	400 V	Through Hole	830 µJ	670 µJ	TO-247A	2 V	250 VA	175 °C	36 nC	93 ns	20 ns	100 A	TO-247-3
Renesas Electronics Corporation RBN75H65T1FPQ-A0#CB0	Standard	Trench	650 V	72 ns	75 A	15 V	16 Ohm	400 V	Through Hole	1.6 mJ	1 mJ	TO-247A	2 V	312 W	175 °C	54 nC	113 ns	29 ns	150 A	TO-247-3
Renesas Electronics Corporation RBN40H65T1FPQ-A0#CB0	Standard	Trench	650 V	55 ns	40 A	15 V	16 Ohm	400 V	Through Hole	620 µJ	520 µJ	TO-247A	2 V	185 W	175 °C	28 nC	96 ns	22 ns	80 A	TO-247-3

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

RBN75H65T1FPQ-A0 Datasheet

RBN75H65T1FPQ-A0#CB0 | Datasheet