Specification	RHU002N06T106

Current - Continuous Drain (Id) (Ta)	200 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	4.4 nC
Input Capacitance (Ciss) (Max)	15 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-70, SOT-323
Package Name	UMT3
Power Dissipation (Max)	200 mW
Rds On (Max)	2.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

RHU002 Series

Part	Gate Charge (Max)	Power Dissipation (Max)	Operating Temperature	Package / Case	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Qualification	Technology	Mounting Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	FET Type	Package Name	Grade	Vgs (Max)
Rohm Semiconductor RHU002N06FRAT106	4.4 nC	200 mW	150 °C	SC-70 SOT-323	2.5 V	15 pF	60 V	2.4 Ohm	200 mA	AEC-Q101	MOSFET (Metal Oxide)	Surface Mount	4 V	10 V	N-Channel	UMT3	Automotive	20 V
Rohm Semiconductor RHU002N06T106	4.4 nC	200 mW	150 °C	SC-70 SOT-323		15 pF	60 V	2.4 Ohm	200 mA		MOSFET (Metal Oxide)	Surface Mount	4 V	10 V	N-Channel	UMT3		20 V

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