GANE190-700BBAZ
ActiveNexperia USA Inc.
700 V, 190 MOHM GALLIUM NITRIDE (GAN) FET IN DPAK PACKAGE
GANE190-700BBAZ
ActiveNexperia USA Inc.
700 V, 190 MOHM GALLIUM NITRIDE (GAN) FET IN DPAK PACKAGE
Description
General part information
GANE190-700BBA Series
The GANE190-700BBA is a general purpose 700 V, 190 mΩ Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | GANE190-700BBAZ |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 11.5 A |
| Drain to Source Voltage (Vdss) | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 2.8 nC |
| Input Capacitance (Ciss) (Max) | 96 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 |
| Power Dissipation (Max) | 84 W |
| Rds On (Max) | 190 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) Positive | 7 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs
plastic, single-ended surface-mounted package (DPAK); 3 leads;2.286 mm pitch; 6.1 mm x 6.6 mm x 2.3 mm body
Probing considerations for fast switching applications
DPAK; Reel dry pack for SMD, 13"; Q2/T3 product orientation