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STB13N80K5 - TO-263 D2PAK

STB13N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 0.37 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN D2PAK PACKAGE

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DocumentsDatasheet+15
STB13N80K5 - TO-263 D2PAK

STB13N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 0.37 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB13N80K5
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC
Input Capacitance (Ciss) (Max) @ Vds870 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]190 W
Rds On (Max) @ Id, Vgs450 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.60
10$ 3.54
100$ 2.83
500$ 2.46
Digi-Reel® 1$ 4.60
10$ 3.54
100$ 2.83
500$ 2.46
Tape & Reel (TR) 1000$ 2.16
NewarkEach (Supplied on Full Reel) 1000$ 3.53

Description

General part information

STB13N80K5 Series

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.