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BSC0302LSATMA1

BSC0302LSATMA1

Obsolete
INFINEON

OPTIMOS™ PD N-CHANNEL POWER MOSFET 120 V ; SUPERSO8 PACKAGE; 8 MOHM;

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BSC0302LSATMA1

BSC0302LSATMA1

Obsolete
INFINEON

OPTIMOS™ PD N-CHANNEL POWER MOSFET 120 V ; SUPERSO8 PACKAGE; 8 MOHM;

Find alt

Description

General part information

BSC0302 Series

OptiMOS™ PD power MOSFETis Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages. Click here to viewfull portfolio.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC0302LSATMA1
Current - Continuous Drain (Id) (Ta)12 A
Current - Continuous Drain (Id) (Tc)99 A
Drain to Source Voltage (Vdss)120 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)79 nC
Input Capacitance (Ciss) (Max)7400 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8-7
Power Dissipation (Max)156 W
Rds On (Max)8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part