IPB60R080P7ATMA1

Active

INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 80 MOHM;

Find alt

Alpha

IPB60R080P7ATMA1

Active

INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 80 MOHM;

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

CoolMOS P7 Series

The600V CoolMOS™ P7superjunction (SJ) MOSFET is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R080P7ATMA1

Current - Continuous Drain (Id) (Tc)	37 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	51 nC
Input Capacitance (Ciss) (Max)	2180 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	129 W
Rds On (Max)	80 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

CoolMOS P7 Series

Part	Package / Case	Input Capacitance (Ciss) (Max)	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Max)	FET Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Technology
INFINEON IPAN80R360P7XKSA1	TO-220-3 Full Pack	930 pF	20 V	30 W	30 nC	N-Channel	360 mOhm	-55 °C	150 °C	800 V	Through Hole	13 A	3.5 V	10 V	PG-TO220-FP	MOSFET (Metal Oxide)
INFINEON IPL60R185P7AUMA1	4-PowerTSFN	1081 pF	20 V	81 W	25 nC	N-Channel	185 mOhm	-40 °C	150 °C	600 V	Surface Mount	19 A	4 V	10 V	PG-VSON-4	MOSFET (Metal Oxide)
INFINEON IPP60R360P7XKSA1	TO-220-3	555 pF	20 V	41 W	13 nC	N-Channel	360 mOhm	-55 °C	150 °C	650 V	Through Hole	9 A	4 V	10 V	PG-TO220-3	MOSFET (Metal Oxide)
INFINEON IPA80R1K4P7XKSA1	TO-220-3 Full Pack	250 pF	20 V	24 W	10 nC	N-Channel	1.4 Ohm	-55 °C	150 °C	800 V	Through Hole	4 A	3.5 V	10 V	PG-TO220-3-31	MOSFET (Metal Oxide)
INFINEON IPU80R900P7AKMA1	IPAK TO-251-3 Short Leads TO-251AA	350 pF	20 V	45 W	15 nC	N-Channel	900 mOhm	-55 °C	150 °C	800 V	Through Hole	6 A	3.5 V	10 V	PG-TO251-3	MOSFET (Metal Oxide)
INFINEON IPLK80R900P7ATMA1	8-PowerTDFN		20 V							800 V	Surface Mount				PG-TDSON-8	MOSFET (Metal Oxide)
INFINEON IPD80R1K4P7ATMA1	DPAK (2 Leads + Tab) SC-63 TO-252-3	250 pF	20 V	32 W	10 nC	N-Channel	1.4 Ohm	-55 °C	150 °C	800 V	Surface Mount	4 A	3.5 V	10 V	PG-TO252-2	MOSFET (Metal Oxide)
INFINEON IPB60R080P7ATMA1	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2180 pF	20 V	129 W	51 nC	N-Channel	80 mOhm	-55 °C	150 °C	600 V	Surface Mount	37 A	4 V	10 V	PG-TO263-3	MOSFET (Metal Oxide)
INFINEON IPN60R360P7SATMA1	TO-261-4 TO-261AA	555 pF	20 V	7 W	13 nC	N-Channel	360 mOhm	-40 °C	150 °C	600 V	Surface Mount	9 A	4 V	10 V	PG-SOT223	MOSFET (Metal Oxide)
INFINEON IPZA60R099P7XKSA1	TO-247-4	1952 pF	20 V	117 W	45 nC	N-Channel	99 mOhm	-55 °C	150 °C	600 V	Through Hole	31 A	4 V	10 V	PG-TO247-4	MOSFET (Metal Oxide)