Specification	PHE13009,127

Current - Collector (Ic) (Max)	12 A
Current - Collector Cutoff (Max)	100 µA
DC Current Gain (hFE) (Min)	8
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power - Max	80 W
Transistor Type	NPN
Vce Saturation (Max)	2 V
Voltage - Collector Emitter Breakdown (Max)	400 V

PHE13 Series

Part	Package Name	Operating Temperature	Package / Case	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Power - Max	Current - Collector Cutoff (Max)	Vce Saturation (Max)	DC Current Gain (hFE) (Min)	Mounting Type
WeEn Semiconductors PHE13009,127	TO-220AB	150 °C	TO-220-3	NPN	12 A	400 V	80 W	100 µA	2 V	8	Through Hole
WeEn Semiconductors PHE13005X,127	TO-220F	150 °C	Isolated Tab TO-220-3 Full Pack	NPN	4 A	400 V	26 VA	100 µA	1 V	10	Through Hole
WeEn Semiconductors PHE13005X/01,127	TO-220F		Isolated Tab TO-220-3 Full Pack								Through Hole
WeEn Semiconductors PHE13005,127	TO-220AB	150 °C	TO-220-3	NPN	4 A	400 V	75 W	100 µA	1 V	10	Through Hole
WeEn Semiconductors PHE13007,127	TO-220AB	150 °C	TO-220-3	NPN	8 A	400 V	80 W	200 µA	350 mV	8	Through Hole
WeEn Semiconductors PHE13003C,126	TO-92-3	150 °C	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	NPN	1.5 A	400 V	2.1 W	100 µA	1.5 V	5	Through Hole
WeEn Semiconductors PHE13003A,126	TO-92-3	150 °C	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	NPN	1 A	400 V	2.1 W	1 mA	1.5 V	10	Through Hole
WeEn Semiconductors PHE13003A,412	TO-92-3	150 °C	TO-226-3 TO-92-3 (TO-226AA)	NPN	1 A	400 V	2.1 W	1 mA	1.5 V	10	Through Hole
WeEn Semiconductors PHE13009/DG,127	TO-220AB	150 °C	TO-220-3	NPN	12 A	400 V	80 W	100 µA	2 V	8	Through Hole
WeEn Semiconductors PHE13003C,412	TO-92-3	150 °C	TO-226-3 TO-92-3 (TO-226AA)	NPN	1.5 A	400 V	2.1 W	100 µA	1.5 V	5	Through Hole

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