Specification	RN1402,LF

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	500 nA
DC Current Gain (hFE) (Min)	50
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	S-Mini
Power - Max	200 mW
Resistor - Base (R1) Resistance	10 kOhm
Resistor - Emitter Base (R2)	10 kOhms
Transistor Type	Pre-Biased, NPN
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

RN1402 Series

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-346(S-Mini)

Part	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Resistor - Base (R1) Resistance	Current - Collector Cutoff (Max)	Package / Case	Resistor - Emitter Base (R2)	Vce Saturation (Max)	Package Name	DC Current Gain (hFE) (Min)	Power - Max	Transistor Type	Current - Collector (Ic) (Max)	Frequency - Transition
Toshiba Semiconductor and Storage RN1402,LF	50 V	Surface Mount	10 kOhm	500 nA	SC-59 SOT-23-3 TO-236-3	10 kOhms	300 mV	S-Mini	50	200 mW	NPN Pre-Biased	0.1 mA	250 MHz

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