Specification	IX6R11M6T/R

Channel Type	Independent
Driven Configuration	Half-Bridge
Fall Time (Typ)	17 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	9.5 V
Logic Voltage - VIL	6 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-40 °C
Package / Case	16-VDFN Exposed Pad
Package Length	7 mm
Package Name	16-MLP
Package Width	6 mm
Rise Time (Typ)	25 ns
Voltage - Supply (Maximum)	35 V
Voltage - Supply (Minimum)	10 VDC

IX6R11 Series

Part	Gate Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	Input Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Mounting Type	Package Name	Logic Voltage - VIH	Logic Voltage - VIL	Number of Drivers	Rise Time (Typ)	Fall Time (Typ)	Operating Temperature (Max)	Operating Temperature (Min)	Channel Type	Package Length	Package Width	High Side Voltage - Max (Bootstrap)	Driven Configuration	Gate Channel	Package / Case
LITTELFUSE IX6R11S3	IGBT MOSFET N-Channel MOSFET	6 A	6 A	Non-Inverting	10 VDC	35 V	Surface Mount	16-SOIC	9.6 V	6 V	2	25 ns	17 ns	125 °C	-40 °C	Independent	0.295 in	7.5 mm	600 V	Half-Bridge	N-Channel
LITTELFUSE IX6R11M6T/R	IGBT MOSFET N-Channel MOSFET			Non-Inverting	10 VDC	35 V	Surface Mount	16-MLP	9.5 V	6 V	2	25 ns	17 ns	125 °C	-40 °C	Independent	7 mm	6 mm	600 V	Half-Bridge	N-Channel	16-VDFN Exposed Pad
LITTELFUSE IX6R11S6	IGBT MOSFET N-Channel MOSFET	6 A	6 A	Non-Inverting	10 VDC	35 V	Surface Mount	18-SOIC	9.6 V	6 V	2	25 ns	17 ns	125 °C	-40 °C	Independent	0.295 in	7.5 mm	600 V	Half-Bridge	N-Channel
LITTELFUSE IX6R11S6T/R	IGBT MOSFET N-Channel MOSFET	6 A	6 A	Non-Inverting	10 VDC	35 V	Surface Mount	18-SOIC	9.6 V	6 V	2	25 ns	17 ns	125 °C	-40 °C	Independent	0.295 in	7.5 mm	600 V	Half-Bridge	N-Channel

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