Specification	SSM3K361TU,LF

Current - Continuous Drain (Id) (Ta)	3.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	3.2 nC
Input Capacitance (Ciss) (Max)	430 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	3-SMD, Flat Leads
Package Name	UFM
Power Dissipation (Max)	1 W
Rds On (Max)	69 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SSM3K361TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 100 V, 3.5 A, 0.069 Ω@10V, SOT-323F(UFM)

Part	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Qualification	Grade	Vgs (Max)	Package Name	Technology	FET Type	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Rds On (Max)
Toshiba Semiconductor and Storage SSM3K361TU,LXHF	3-SMD Flat Leads	Surface Mount	100 V	1 W	175 °C	3.2 nC	430 pF	10 V	4.5 V	AEC-Q101	Automotive	20 V	UFM	MOSFET (Metal Oxide)	N-Channel	2.5 V	3.5 A	69 mOhm
Toshiba Semiconductor and Storage SSM3K361TU,LF	3-SMD Flat Leads	Surface Mount	100 V	1 W	175 °C	3.2 nC	430 pF	10 V	4.5 V			20 V	UFM	MOSFET (Metal Oxide)	N-Channel	2.5 V	3.5 A	69 mOhm

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