Specification	RN1114MFV,L3F

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	500 nA
DC Current Gain (hFE) (Min)	50
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-723
Package Name	VESM
Power - Max	150 mW
Resistor - Base (R1) Resistance	1 kOhm
Resistor - Emitter Base (R2)	10 kOhms
Transistor Type	Pre-Biased, NPN
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

RN1114 Series

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 1 kΩ/10 kΩ, SOT-723(VESM)

Part	Package Name	Mounting Type	Package / Case	Vce Saturation (Max)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min)	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max)	Transistor Type	Resistor - Base (R1) Resistance	Power - Max	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)
Toshiba Semiconductor and Storage RN1114MFV,L3F	VESM	Surface Mount	SOT-723	300 mV	10 kOhms	50	0.1 mA	500 nA	NPN Pre-Biased	1 kOhm	150 mW	250 MHz	50 V
Toshiba Semiconductor and Storage RN1114,LF	SSM	Surface Mount	SC-75 SOT-416	300 mV	10 kOhms	50	0.1 mA	500 nA	NPN Pre-Biased	1 kOhm	100 mW	250 MHz	50 V
Toshiba Semiconductor and Storage RN1114(T5L,F,T)	SSM	Surface Mount	SC-75 SOT-416	300 mV	10 kOhms	50	0.1 mA	500 nA	NPN Pre-Biased	1 kOhm	100 mW	250 MHz	50 V

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