R6504ENJTL
ActiveRohm Semiconductor
650V 4A TO-263, LOW-NOISE POWER MOSFET
R6504ENJTL
ActiveRohm Semiconductor
650V 4A TO-263, LOW-NOISE POWER MOSFET
Description
General part information
R6504ENJ Series
R6504ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Technical Specifications
Parameters and characteristics for this part
| Specification | R6504ENJTL |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 4 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 15 nC |
| Input Capacitance (Ciss) (Max) | 220 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | LPTS |
| Power Dissipation (Max) | 58 W |
| Rds On (Max) | 1.05 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Technical Data Sheet EN
Explanation for Marking
PCB Layout Thermal Design Guide
Two-Resistor Model for Thermal Simulation
Notes for Temperature Measurement Using Forward Voltage of PN Junction
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Moisture Sensitivity Level - Transistors
Reliability Test Result
R6504ENJ ESD Data
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
MOSFET Gate Drive Current Setting for Motor Driving
Part Explanation
List of Transistor Package Thermal Resistance
Condition of Soldering / Land Pattern Reference
What Is Thermal Design
Notes for Temperature Measurement Using Thermocouples
Basics of Thermal Resistance and Heat Dissipation
How to Create Symbols for PSpice Models
Compliance of the RoHS directive
R6504ENJ Data Sheet
Measurement Method and Usage of Thermal Resistance RthJC
Precautions When Measuring the Rear of the Package with a Thermocouple
Inner Structure
Package Dimensions
About Flammability of Materials
Impedance Characteristics of Bypass Capacitor
How to Use LTspice® Models: Tips for Improving Convergence
Anti-Whisker formation - Transistors
What is a Thermal Model? (Transistor)
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Types and Features of Transistors
Importance of Probe Calibration When Measuring Power: Deskew
About Export Regulations
Temperature derating method for Safe Operating Area (SOA)
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Taping Information
MOSFET Gate Resistor Setting for Motor Driving
Notes for Calculating Power Consumption:Static Operation
Calculation of Power Dissipation in Switching Circuit
Report of SVHC under REACH Regulation
How to Use LTspice® Models
Method for Monitoring Switching Waveform
Judgment Criteria of Thermal Evaluation
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Method for Calculating Junction Temperature from Transient Thermal Resistance Data