
BCR08PNH6327XTSA1
Infineon Technologies
TRANS NPN/PNP PREBIAS SOT363
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BCR08PNH6327XTSA1
Infineon Technologies
TRANS NPN/PNP PREBIAS SOT363
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | BCR08PNH6327XTSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 70 |
| Frequency - Transition | 170 MHz |
| Mounting Type | Surface Mount |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 250 mW |
| Resistor - Base (R1) | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 47000 Ohms |
| Supplier Device Package | PG-SOT363-PO |
| Transistor Type | 1 NPN, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 18000 | $ 0.09 | |
| 30000 | $ 0.08 | |||
| 75000 | $ 0.07 | |||
Description
General part information
BCR08 Series
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 170MHz 250mW Surface Mount PG-SOT363-PO
Documents
Technical documentation and resources