Specification	SI8489EDB-T2-E1

Current - Continuous Drain (Id) (Ta)	3.06 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	27 nC
Input Capacitance (Ciss) (Max)	765 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	4-UFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	780 mW, 1.8 W
Rds On (Max)	44 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.2 V

SI8 Series

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Vgs(th) (Max)	Package / Case	Package Name	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Rds On (Max)	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Package Width	Package Length
Vishay Dale SI8489EDB-T2-E1	1.8 W 780 mW	765 pF	12 V	1.2 V	4-UFBGA	4-Microfoot	3.06 A	10 V	2.5 V	P-Channel	44 mOhm	20 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	27 nC
Vishay Dale SI8851EDB-T2-E1	660 mW	6900 pF	8 V	1 V	30-XFBGA	Power Micro Foot®	7.7 A	4.5 V	1.8 V	P-Channel	8 mOhm	20 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	180 nC	2 mm	2.4 mm
Vishay Dale SI8817DB-T2-E1	500 mW	615 pF 615 pF	8 V	1 V	4-XFBGA	4-Microfoot	2.1 A	4.5 V	1.5 V	P-Channel	76 mOhm	20 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	19 nC

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