STGW75H65DFB2-4
ActiveTRENCH GATE FIELD-STOP, 650 V, 75 A, HIGH-SPEED HB2 SERIES IGBT IN A TO247-4 PACKAGE
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STGW75H65DFB2-4
ActiveTRENCH GATE FIELD-STOP, 650 V, 75 A, HIGH-SPEED HB2 SERIES IGBT IN A TO247-4 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGW75H65DFB2-4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 115 A |
| Current - Collector Pulsed (Icm) | 225 A |
| Gate Charge | 207 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power - Max [Max] | 357 W |
| Reverse Recovery Time (trr) | 88 ns |
| Supplier Device Package | TO-247-4 |
| Switching Energy | 766 µJ, 992 µJ |
| Td (on/off) @ 25°C | 22 ns |
| Td (on/off) @ 25°C | 121 ns |
| Test Condition | 75 A, 15 V, 10 Ohm, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGW75H65DFB2-4 Series
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Documents
Technical documentation and resources