HN2S03FE(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTT 20V 50MA ES6

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Obsolete

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTT 20V 50MA ES6

Technical Specifications

Parameters and characteristics for this part

Specification	HN2S03FE(TE85L,F)

Current - Reverse Leakage @ Vr	500 nA
Diode Configuration	3 Independent
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SOT-666, SOT-563
Speed	Any Speed
Speed	200 mA
Supplier Device Package	ES6
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	550 mV

Part	Current - Reverse Leakage @ Vr	Technology	Speed	Speed	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Package / Case	Diode Configuration	Mounting Type	Voltage - Forward (Vf) (Max) @ If
Toshiba Semiconductor and Storage HN2S03FUTE85LF	500 nA	Schottky	Any Speed	200 mA	125 °C	20 V	US6	6-TSSOP SC-88 SOT-363	3 Independent	Surface Mount	550 mV
Toshiba Semiconductor and Storage HN2S03FE(TE85L,F)	500 nA	Schottky	Any Speed	200 mA	125 °C	20 V	ES6	SOT-563 SOT-666	3 Independent	Surface Mount	550 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 3 Independent 20 V 50mA Surface Mount SOT-563, SOT-666

Technical documentation and resources