IKW40N65RH5XKSA1

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Infineon Technologies

THE IKW40N65RH5 IS A 650 V, 40 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

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IKW40N65RH5XKSA1

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Infineon Technologies

THE IKW40N65RH5 IS A 650 V, 40 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

Deep-Dive with AI

DocumentsDatasheet Optimizing layout for paralleling power discrete semiconductor devices +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IKW40N65RH5XKSA1

Gate Charge	95 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	250 W
Supplier Device Package	PG-TO247-3
Switching Energy	160 µJ, 120 µJ
Td (on/off) @ 25°C	165 ns, 18 ns
Test Condition	20 A, 15 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

IKW40N65 Series

Part	Mounting Type	Switching Energy	Voltage - Collector Emitter Breakdown (Max)	IGBT Type	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Gate Charge	Package / Case	Power - Max [Max]	Supplier Device Package	Test Condition	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic
Infineon Technologies IKW40N65WR5XKSA1	Through Hole	160 µJ 770 µJ	650 V	Trench	112 ns	42 ns 432 ns	193 nC	TO-247-3	230 W	PG-TO247-3	15 V 20 A 20 Ohm 400 V	120 A	-40 C	175 °C	80 A	1.8 V
Infineon Technologies IKW40N65ES5XKSA1	Through Hole	400 µJ 860 µJ	650 V	Trench	73 ns	19 ns 130 ns	95 nC	TO-247-3	230 W	PG-TO247-3	10 Ohm 15 V 40 A 400 V		-40 C	175 °C	79 A	1.7 V
Infineon Technologies IKW40N65RH5XKSA1	Through Hole	120 µJ 160 µJ	650 V	Trench Field Stop		18 ns 165 ns	95 nC	TO-247-3	250 W	PG-TO247-3	15 Ohm 15 V 20 A 400 V		-40 C	175 °C		2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.00
		30	$ 4.02
		120	$ 3.36
		510	$ 2.88
		1020	$ 2.85
Newark	Each	1	$ 8.17
		10	$ 7.85
		25	$ 5.40
		50	$ 5.09
		100	$ 4.78
		480	$ 4.58
		720	$ 4.35

Description

General part information

IKW40N65 Series

650 V, 40 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in TO-247-3 package. The ultra-fast 650 V hard-switchingTRENCHSTOP™ 5 H5IGBT benefits very low switching losses at switching speed above 30 kHz. Combination of ultra-fastTRENCHSTOP™ 5 H5IGBT with half-ratedfreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discreteenables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.

Documents

Technical documentation and resources

Datasheet

Optimizing layout for paralleling power discrete semiconductor devices

Application Notes

Technical Data Sheet EN

Datasheet