SUP90140E-GE3

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Vishay Siliconix

MOSFET N-CH 200V 90A TO220AB

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Vishay Siliconix

MOSFET N-CH 200V 90A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP90140E-GE3

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	96 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 200V 90A TO220AB

Part	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type
Vishay Siliconix SUP90140E-GE3	TO-220AB	20 V	200 V	MOSFET (Metal Oxide)	90 A	375 W	-55 °C	175 ░C	TO-220-3	N-Channel	96 nC	10 V	7.5 V	4 V	17 mOhm	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 90A (Tc) 375W (Tc) Through Hole TO-220AB

Technical documentation and resources